Silicon-based quantum computing is a topic of intense research worldwide because of the extremely long coherence times of spin qubits in silicon and the potential for these qubits to be incorporated into future silicon devices using fabrication technology developed for conventional electronics. Motivated by our previous theoretical work on silicon quantum computer architectures, we are exploring novel approaches to creating semiconductor devices at the atomic scale: we have fabricated and measured the first silicon field effect transistor (FET) devices in which mobile electrons are confined adjacent to a hydrogen terminated silicon surface. These devices have record mobility and exhibit the sixfold degeneracy expected on silicon . We have also observed intervalley drag and shown how it can be a new probe of the physics of two dimensional electron systems. These FETs may pave the way to new atomic scale device concepts relevant to quantum computing and enable elucidation of new physics of the unique two dimensional electron systems located at these surfaces.
In a second project, we are applying the technologies being developed for ion trap quantum computing to isolate and characterize flakes of levitated spinning graphene.
For more information, please peruse our recent publications or contact the people who have done the work.