Silicon-based Quantum Computing Research at the Laboratory for Physical Sciences |
Recent Publications
Levitated spinning graphene flakes in an electric quadrupole ion trap, B. E. Kane, Phys. Rev. B 82, 115441 (2010). (link)
Temperature-dependent transport in a sixfold degenerate 2D electron system on a H-Si(111) surface, Robert N. McFarland, Tomasz M. Kott, Luyan Sun, K. Eng, B. E. Kane, Phys. Rev. B 80, 161310 (2009). (link)
Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors, L. Sun and B. E. Kane, Phys. Rev. B 80, 153310 (2009). (link)
Coulomb blockade in a Si channel gated by an Al single-electron transistor, L. Sun, K. R. Brown, and B. E. Kane, Appl. Phys. Lett. 91, 142117 (2007). (link)
Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface, K. Eng, R. N. McFarland, and B. E. Kane, Phys. Rev. Lett 99, 016801 (2007). (link)
Electric-field-dependent spectroscopy of charge motion using a single-electron transistor, K. R. Brown, L. Sun, and B. E. Kane Appl. Phys. Lett. 88, 213118 (2006). (link)
High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces, K. Eng, R. N. McFarland and B. E. Kane, Appl. Phys. Lett. 87, 052106 (2005). (link)
Can we build a large-scale quantum computer using semiconductor materials? B. E. Kane, MRS Bulletin 30, 105 (2005). (link, pdf)
Weak localization thickness measurements of Si:P delta-layers, D. F. Sullivan, B. E. Kane, and P. E. Thompson, Appl. Phys. Lett. 85, 6362 (2004). (link)
Millikelvin scanned probe for measurement of nanostructures, K. R. Brown, L. Sun, and B. E. Kane, Rev. Sci. Instrum. 75, 2029 (2004). (link)
Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach, A. J. Skinner, M. E. Davenport, and B. E. Kane, Phys. Rev. Lett. 90, 087901 (2003). (link)
For a complete list, see Bruce’s CV (pdf). |
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Silicon-based quantum computing home page B. E. Kane November, 2010 |
