GCA DSW 4800 Specifications

Wavelength

i-line 365 nm

Flux Designed For

75 mW/cm² --- (see note at end of article).

Exposure Time Calculation

Dose = Time x Flux (mJ/cm² = 75mW/cm2 x sec) --- (see note below)

The photodetector inside the column measures the actual flux, and the computer uses that data to calculate the actual exposure time based on the dose (time) specified in the job file.

Light Source

Mercury Arc Lamp 350W (Ushio 350DP)

Light Homogenizer

Maximus 600

Lens

Zeiss 1078-34

Numerical Aperture 0.315
Depth of Focus 3.56 µm

Resolution (lines and spaces)

Production = 0.91 µm

LPS = 0.7 µm
Best Ever = 0.5 µm with CEM

Overlay

Production = ± 0.3 µm

LPS = ± 0.1 µm

Stepping Precision

± 0.04 µm

Field Size

Nominal : 10 mm²

Guaranteed : 8.2 mm²

Reduction Ratio

10:1

Mask Size

5 inch²

Maximum Full Wafer Diameter

3 inch : 76.2 mm

Typical Small Chip Size

13 mm²

Minimum Small Chip Size

5 mm²

Alignment Scope Objective Centers

63.5 mm

Focus calibrated benchmark

251 where 1 = 0.25 um.

Autofocus Column Range (wafer thickness)

500 µm ± 250µm

Autofocus Boundry

Circumferential 3 mm of specified wafer diameter (wafer dia. less 6 mm).

Autofocus Laser Spot Size

1 mm x 2 mm

Note on Lamp Flux
From: Fred Seiferth
To: Oliver King
Date: 29 Oct 1997
Subject: STEPPER EXPOSURE PARAMETERS
Stepper Users,
During the annual maintenance, the stepper technician adjusted a component that affects the exposure time. The time that you must put into the program that you execute has basically doubled, more or less.
(Editor's note: photolithography parameters for obsolete photoresists deleted from text.)
(Editor's note: this information supercedes the foregoing flux and dose data, i.e., the new starting point for characterization of photoresists is 37.5mW/cm².)
Sincerely, Fred Seiferth