Phaneuf Group Publications
�����
64. �Comparison of enhanced
fluorescence and near-field intensity for Ag nanowire/nanocolumn
arrays�, Shy-Hauh Guo1, Julia J. Heetderks3,
63.� �Supramolecular Cobalt-porphyrin/fulleropyrrolidine
dyads self-organized on gold(111): a scanning tunneling microscopy and spectroscopy study�,� F. Matino2, V. Arima*, G. Maruccio, R. J. Phaneuf, R.
Del Sole, G. Mele, G. Vasapollo,
R. Cingolani, and R. Rinaldi, submitted to Journal of the American
Chemical Society (2008).
62. �Anomalous scaling in epitaxial
growth on vicinal surfaces: meandering and mounding instabilities in a linear
growth equation with spatiotemporally correlated noise�, Ajmi B.H. Hammouda*,
A. Pimpinelli and R.J. Phaneuf, accepted for publication in Surface Science (2008).
61.
�Characteristic Length Scales In Evolution Of Patterned Step Structure
On Vicinal Si(111) Surface During High Temperature
Annealing�, H-C.
60.� �Fluorescence Enhancement from
Size-selected Nanoparticles: The Role of an Active Substrate Substrate�, S.-H. Guo1, S.-J.
Tsai1, H.-C.
59.� �Near-surface modification of polystyrene by Ar+: Molecular dynamics simulations and experimental validation�, J. J. V�gh*, D. Nest, D. B. Graves, R. Bruce2, S. Engelmann2, T. Kwon1, R. J. Phaneuf, G. S. Oehrlein, B. K. Long and C. G. Willson, Applied Physics Letters 91, 233113-1,-3 (2007)
�
58. �Plasma-surface interactions of model polymers
for advanced photoresists using C4F8
/Ar discharges and energetic ion beams�, S. Engelmann2,
R. L. Bruce2, T. Kwon1, R. Phaneuf, G. S. Oehrlein*, Y.
C. Bae, C. Andes, D. Graves and D. Nest, E. A.
Hudson, P. Lazzeri, E. Iacob,
and M. Anderle, Journal
of Vacuum Science and Technology 25,
1353-1364 (2007).
57. �Spatial and
Size-Resolved Electrostatic-Directed Deposition of Nanoparticles on a
Field-Generating Substrate: Theoretical and Experimental Analysis�, D.-H. Tsai2, T. Hawa, H.-C.
Kan3, R. J. Phaneuf, and M.
R. Zachariah, Nanotechnology 18,
365201-36510 (2007)
56.� �Transient Roughening Behavior and Spontaneous
Pattern Formation during Plasma Etching of Nanoporous Silica�, T. Kwon1, H.-C. Kan3, G. S. Oehrlein, and R.J.
Phaneuf, Nanotechnology, 18, 055305-055309
(2007)
55. �Temperature-Driven Change in the Unstable
Growth Mode on Patterned GaAs(001)�, T. Tadayyon-Eslami1, H.-C. Kan3,
L. C. Calhoun and R. J. Phaneuf, Physical
Review Letters 97, 126101-1,-4 (2006)
54. �Evolution of Patterned GaAs(001) during Homoepitaxial Growth: Size vs. Spacing,�� H.-C. Kan3, R. Ankam1, S. Shah1, K.M. Micholsky1,� T. Tadayyon-Eslami1, L. Calhoun, and R. J. Phaneuf, Phys. Rev. B 73, 195410-1,-8 (2006).
�
53. �A Systematic Study of the Size and Spacing Dependence of Ag Nanoparticle Enhanced Fluorescence Using Electron Beam Lithography,� T. D. Corrigan3, S.-H. Guo1, H. Szmacinski, and R. J. Phaneuf, Applied Physics Letters 88, 101112-1,-3 (2006).
52. ��Length-Scale Dependence of the Step Bunch Self-Organization on Patterned Vicinal Si(111) Surfaces�, T. Kwon1, H-C. Kan3 and R. J. Phaneuf, Applied Physics Letters 88, 071914-1,-3 (2006)
51.� �Electrostatic-Directed Deposition Of Nanoparticles On A Field Generating Substrate,�
D-H Tsai2, S. H. Kim, T. D. Corrigan3, R J Phaneuf, and M.R. Zachariah, Nanotechnology 16 (2005)
1856�1862.
50. �Enhanced
Fluorescence from Periodic Arrays of Silver Nanoparticles,� (Invited), T. D.
Corrigan3,
49.
�Direct imaging of forces in scanning tunneling microscopy (STM) tunneling to a
silicon pn junctions�, Jeong Young Park, �R. J. Phaneuf,� D. F. Ogletree,� and M. Salmeron, Applied Physics Letters 86, 172105 (2005)
48.
�Transient
evolution of surface roughness on patterned GaAs(001) during homoepitaxial growth�, H.-C.
47.� �Patterning-based Investigation of the
length-scale dependence of the surface evolution during multilayer epitaxial
growth�, S. Shah1, K. Limpaphayom1, T. Tadayyon-Eslami1, H. C. Kan3
and R. J. Phaneuf, Applied Physics
Letters 83,
4330-4332 (2003)
46. Investigation of the direct electromigration term for Al nanodots within the depletion zone of a pn junction�, J. Y. Park3 and R. J. Phaneuf, Journal of Applied Physics 94, 6883-6886 (2003)
45.� �Low Energy Electron Microscopy: Imaging
Surface Dynamics�, (Invited) R. J. Phaneuf* and A. K. Schmid, Physics Today,
56(3), 50-55 (2003)
44.� �Conductance Imaging of Thermally Desorbed
Silicon Oxide�, J. Y. Park3 and R.
J. Phaneuf, Journal of Vacuum Science and
Technology B, 21, 1254-1257
(2003)
43.� �Time Response in Tunneling to a PN
Junction,� J. Y. Park3 and R. J.
Phaneuf, Applied Physics Letters 82, 64-66 (2003)
42. �Comparison Between Experimental Characterization and Electron Optical Simulation of the Astigmatism of a Magnetic Prism in LEEM�, H. C. Kan3, D. Auerbach1� and R. J. Phaneuf, Review of Scientific Instruments, 74, 1008-1015 (2002)
41. �A Comparison of Stigmatically Focusing Magnetic Prisms of Square vs. Round Symmetries�, H. C. Kan3, T. D�rkop1 and R. J. Phaneuf, Journal of Vacuum Science and Technology B 20, 2519-2525 (2002)
40.
�Photoelectron Emission Microscopy of Ultrathin Oxide-Covered Devices�, V.
39.� �Spectroscopy of an Ensemble of In0.50Ga0.50As Quantum Dots Following Highly Localized Hole Injection by a Scanning Tunneling Microscope�, T.K. Johal3, G. Pagliara, R. Rinaldi*, A. Passaseo� R. Cingolani, M. Lomascolo, A. Taurino,� M. Catalano and R. J. Phaneuf, Physical Review B 66, 155313-1, -6 (2002)
38.� �Polarity-dependence in pulsed scanning tunneling microscopy fabrication and modification of metal nanodots on silicon,� J. Y. Park3 and R.J. Phaneuf, Journal of Applied Physics 92, 2139-2143 (2002)
37.� �Direct imaging of a biased pn junction with conductance mapping�, J. Y. Park3, E.D. Williams and R. J. Phaneuf, Journal of Applied Physics 91, 3745-3749 (2002)
36.� �A quick estimation of the LEED pattern size
formed by an electrostatic objective lens in LEEM�, H.-C. Kan3 and R. J. Phaneuf, Optik 112, 511-514 (2001)
35.� �A Model for Doping-Induced Contrast in
PEEM�, V.
34.� �Photon Energy Dependence of Contrast in
Photoelectron Emission Microscopy of Si Devices�, V. W. Ballarotto3*, K. Siegrist2, R. J.
Phaneuf, E. D. Williams, W. C. Yang and R. J. Nemanich,
Journal of Applied Physics, 91, 469-475
(2001)
33.� �Focusing of low energy electrons by
sub-micrometer patterned structures in LEEM�, H.-C. Kan3 and R. J. Phaneuf, Journal
of Vacuum Science and Technology B 19,
1158-1163 (2001)
32.� �Scanning
Tunneling Spectroscopy of Field Induced Au Nanodots
on Ultrathin Oxides on Si(001)�, J. Y. Park3*, R. J. Phaneuf and E. D. Williams, Journal of Vacuum
Science and Technology B 19,
523-526 (2001)
31.� �Variation of threshold field in field
induced fabrication of Au nanodots on ultrathin in
situ grown silicon oxide�, J. Y. Park3*, R. J. Phaneuf and E. D. Williams, Surface Science 470,
L69-L74 (2000)
30.� �Imaging the Band-Bending Across a
PN-Junction Using Scanning X-ray Photoelectron Microscopy�, R. J. Phaneuf,
H.-C. Kan3, M. Marsi, L. Gregoratti2,
29.� �PEEM Imaging of Dopant Contrast in Si(001)�, V. W. Ballarotto3*, K. Siegrist2, R. J. Phaneuf, E. D. Williams and S. Mogren, Surface Science, 461, L571-L574 (2000)
28.� �Growth Morphologies in GaAs and InP Molecular Beam Epitaxy�, G. Lengel3, R. J. Phaneuf, E.D. Williams*, S. D. Sarma, W. Beard, and F. G. Johnson, Physical Review B 60, R8469-R8472 (1999)
27.� "Equilibration of Ring-Cluster Surface
Phases and Silicide Islands for Cobalt adsorbed on
Si(111)", R. J. Phaneuf*, P. A. Bennett, M. Marsi,
S. G�nther3, L. Gregoratti2 and M. Kiskinova, Surface Science, 431, 232-241 (1999)
26.� �Ni/Si(111) system: Formation and Evolution of two- and three-dimensional phases studied by spectromicroscopy�, L. Gregoratti2, S. G�nther3, J. Kovac, M. Marsi, R. J. Phaneuf and M. Kiskinova, Physical Review B 59, 2018-2024, (1999)
25.� �LEEM Studies of Phase Separations and Surface Depletion of Co and Ni on Si(111)�,� R. J. Phaneuf* and P. A. Bennett, Surface Review and Letters� 5, 1179-1188, (1999)
24.� "Low Energy Electron Microscopy Studies of 2D Eutectic Behavior for the growth of Cobalt on Si(111)", (Invited) R. J. Phaneuf*, Y. Hong2, S. H�rch3� and P. A. Bennett, Micron 30, 13-20, (1998)
23.� "Lateral pn Junction Characterization with Scanning Tunneling Microscopy: Junction Delineation and Depletion Zone Measurements", M. L. Hildner3, R. J. Phaneuf* and E. D. Williams, Applied Physics Letters 72, 3314-3316, (1998)
22.� "Photoemission Electron Microscopy of Schottky Contacts", M. Giesen3*, R. J. Phaneuf, E.D. Williams, and T. L. Einstein, Surface Science 396, 411-421, (1998)
21.� "Characterization of P-N Junctions and
20.� �Two Dimensional Phase Separation for Co Adsorbed
on Si(111),� R. J. Phaneuf*, P.A. Bennett, Y. Hong2, and
19.� "Surface Phase Transformations in the Ni/Si(111) System Real Time Observations Using LEEM and STM," P.A. Bennett*, M. Y. Lee2, S. A. Parikh2, K. W�rm2, and R. J. Phaneuf, Journal of Vacuum Science and Technology A 13, 1728-1732 (1995)
18.� "Sublimation and Phase Transitions on Singular and Vicinal Si(111) Surfaces," T. M. Jung1, R. J. Phaneuf* and E. D. Williams, Surface Science 301, 129-135 (1994).
17.� "Reduced Background Light in Visual Low-Energy Electron Diffraction Using an Optical Bandpass Filter, "R. J. Phaneuf and H.-C. Kan1, Review of Scientific Instruments 65, 3871-3872 (1994)
16. "Thermodynamics and Statistical Mechanics of the Faceting of Stepped Si(111)," E. D. Williams*, R. J. Phaneuf, �J. Wei2, N. C. Bartelt and T. L. Einstein Surface Science 294, 219-242 (1993).
15.� "The Crossover from Metastable to Unstable Facet Growth on Si(111)," R. J. Phaneuf*,� N. C. Bartelt, E. D. Williams, W. Swiech2 and E. Bauer, Physical Review Letters 71, 2284-2287 (1993).
14.� "Low Energy Electron Microscopy Investigations of the Domain Growth of the (7x7) Reconstruction on Si(111)," R. J. Phaneuf*, N. C. Bartelt, E. D. Williams, W. Swiech2 and E. Bauer, Surface Science 268, 227-237 (1992).
13.� "Low Energy Electron Microscopy Investigations of Orientational Phase Separation on Vicinal Si(111) Surfaces," R. J. Phaneuf*, N. C. Bartelt, E. D. Williams, W. Swiech2 and E. Bauer, Physical Review Letters 67, 2986-2889 (1991)
12.� "Step Structures and Reconstructions on Vicinal Ge(111) Surfaces," T. M. Jung1, R. J. Phaneuf*, and E. D. Williams, Surface Science 254, 235-250 (1990)
11.� "Step-Height Tripling Transition on Vicinal Si(111)," R. J. Phaneuf* and E. D. Williams, Phys. Rev. B 41, 2991-3003, (1990)
10.� "Orientational Stability of� Silicon� Surfaces," N. C. Bartelt*, R. J. Phaneuf, E. D. Williams, and S. Das Sarma, Journal of Vacuum Science and Technology A 7, 1898-1905 (1989)
9.� "Comparison of LEED and STM Measurements of Vicinal Si(111),", X.-S. Wang2, R. J. Phaneuf and E. D. Williams, Journal of Microscopy 152, 473-480 (1988)
8. "The Temperature Dependence of Vicinal Si(111) Surfaces," R. J. Phaneuf*, E. D. Williams and N. C. Bartelt Physical Review B 38, 1984-1993 (1988).
7.� "Surface Phase Separation of Vicinal Si(111)," R.J. Phaneuf and E.D. Williams, Journal of Vacuum Science and Technology A 6, 657-657 (1988).
6.� �Metastable Structures of Si(111) Formed by Laser-Quenching,� R. J. Phaneuf* and E. D. Williams, Surface Science 195, 330-340 (1988).
5.� "Surface Phase Separation of Vicinal Si(111)," R. J. Phaneuf* and E. D. Williams, Physical Review Letters� 58, 2563-2566 (1987).
4.� "Comparison of High-Temperature and Laser-Quenched Si(111) Using Low-Energy Electron Diffraction," R. J. Phaneuf* and E. D. Williams, Physical Review B 35, 4155-4158 (1987).
3. �Low Energy Electron Diffraction and Physisorption Studies of the Ge(111) Surface�, M. B. Webb*, R. J. Phaneuf and W. E. Packard, Journal of Vacuum Science and Technology A 4, 1522-1523 (1986).
2.� �A LEED Study of Ge(111): A High Temperature Incommensurate Structure�, R. J. Phaneuf* and M. B. Webb, Surface Science 164, 167-195 (1985).
1.� "Current-Voltage Characteristics and Composition Profiles of Ni-Pt Silicide Schottky Diodes," A. Shepela, R. J. Phaneuf, and E. F. Kennedy, Journal of Applied Physics 51, 2928-2932 (1980).
8. �Rectifying
behaviour of self assembled porphyrin/fullerene dyads on Au(111)�, F.Matino2,
V.Arima, G.Maruccio, R.J.Phaneuf, R.Del Sole, G.Mele, G. Vasapollo, R.Cingolani, R.Rinaldi, Journal
of Physics: Conference Series 61,
795-799 (2007)
7. �Enhanced
fluorescence using silver nanoparticles patterned by e-beam lithography�,�
Henryk
Szmacinski*, Vincent J. Pugh, Wayne E. Moore, Timothy C. Corrigan3,
Shy-Hauh Guo1, and Ray Phaneuf, Proc. SPIE 5703, 25-33 (2005)
6.� �Conductance Imaging of the Depletion Region of a Biased Silicon PN Device�, J.Y. Park3, R. J. Phaneuf* and E.D. Williams, Materials Research Society Symposium Proceedings 669, J2.3.1-J.2.3.5, (2001)
5.� "PEEM Imaging and
Modeling of Dopant-Concentration Variation In Devices", V.W. Ballarotto3*, K. Siegrist2, R.J. Phaneuf and E.D. Williams, AIP Conference Proceedings 550, 307-311 (2001)
4.� "Brownian Motion and Coarsening of
Domain Boundaries on (7x7)-Si(111)," P. Atala2*, R. J. Phaneuf, N. C. Bartelt, W.
Swiech2, and E. Bauer, Materials Research Society Symposium
Proceedings 404, 117-122, (1996)
3.� "Evolution of Si Surface Nanostructure under Growth Conditions," R. J. Phaneuf*, H.-C. Kan1 and E. D. Williams, in: Low dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates, ed. K. Eberl (Kluwer Academic, Dordrecht Netherlands, 1995), pp. 185-195.
2. "The Role of Stress in the Faceting of Stepped Si(111) Surfaces," E. D. Williams*, R. J. Phaneuf, N. C. Bartelt, W. Swiech2 and E. Bauer, Materials Research Society Symposium Proceedings 238, 227 (1992).
1.� �The Phase Diagram of Vicinal Si(111) Surfaces Misoriented Toward the [110] Direction�, R.J. Phaneuf, N.C. Bartelt and E.D. Williams, Proceedings of the 2nd International Conference on the Structure of Surfaces, eds, J.F. van der Veen and M.A. Van Hove, Springer-Verlag, Berlin 525 (1987)